roithner lasertechnik roithner lasertechnik a-1040 vienna, schoenbrunner strasse 7, austria tel: +43 -1- 586 52 43-0 fax: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT6650G technical data high power visible laserdiode structure: high efficiency movcd quantum well design lasing wavelength: 660 nm typ., multimode output power: 50 mw package: 9 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cathode 3) photodiode anode absolute maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 55 mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature t c -10 .. +40 c storage temperature t stg -40 .. +85 c optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit optical output power p o cw operation 50 mw threshold current i th cw operation 70 85 120 ma operation current i op p o = 50 mw 135 160 220 ma operation voltage v op p o = 50 mw 2.0 2.1 2.2 v lasing wavelength l p p o = 50 mw 655 660 665 nm beam divergence q // p o = 50 mw 10 12 14 beam divergence q ^ p o = 50 mw 20 25 30 lasing aperture a p o = 50 mw 10 x 1 m2 monitor current i m p o = 50 mw 0.35 0.5 1.5 ma note! laserdiode must be cooled!
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